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2SB930A Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SB930A | Transistor Product specification
2SB930A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9.70 -0.2
Low collector-emitter s | TY Semiconductor |
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2 | 2SB930A | Silicon PNP epitaxial planar type(For power amplification) Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplification Complementary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer rati | Panasonic Semiconductor |
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1 | 2SB930A | Transistor SMD Type
Silicon PNP Epitaxial Planar Type 2SB930A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward current transfer ratio hFE which has satisfactory linearity.
+0.2 9 | Kexin |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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