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Datasheet 2SC1970 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC1970 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
 Mitsubishi Electric Semiconductor |
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| 1 | 2SC1970 | Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1970
DESCRIPTION ·High Power Gain: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability
APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABS |
 Inchange Semiconductor |
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