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2SC2134 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC2134 | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) | Mitsubishi Electric Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC2130 | NPN Transistor |
JIANGSU CHANGJIANG |
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2SC2139 | SILICON POWER TRANSISTOR |
SavantIC |
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2SC2131 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band Mobile radio applications) |
Mitsubishi Electric Semiconductor |
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2SC2133 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) |
Mitsubishi Electric Semiconductor |
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2SC2134 | NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
Mitsubishi Electric Semiconductor |
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2SC2137 | SILICON POWER TRANSISTOR |
SavantIC |
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2SC2139A | SILICON POWER TRANSISTOR |
SavantIC |
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2SC2131 | Trans GP BJT NPN 18V 0.6A 3-Pin T-8E |
New Jersey Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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