|
|
Datasheet 2SC2290 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2290 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
l Specified 12.5V, 28MHz Characteristics
l Output Power
: Po = 60WPEP (Min.)
l Power Gain
: Gp = 11.8dB (Min.)
l Collector Efficiency
: ηC = 35% (Mi |
 Toshiba Semiconductor |
 |
| 2 | 2SC2290 | Silicon NPN POWER TRANSISTOR HG Semiconductors
HG RF POWER TRANSISTOR
2SC2290
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXI |
 HGSemi |
|
| 1 | 2SC2290A | SSB LINEAR POWER AMPLIFIER APPLICATIONS 2SC2290A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8dB (Min.) : ηC = |
Toshiba Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SC2290. Si pulsa el resultado de búsqueda de 2SC2290 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |