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2SC2481 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC2481 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2481
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·C | Inchange Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC2482 | 300V, 100mA, Silicon NPN TRANSISTOR |
Toshiba Semiconductor |
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2SC2481 | Power Transistor |
Inchange Semiconductor |
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2SC2482 | NPN Transistor |
LGE |
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2SC2484 | Silicon NPN Power Transistor |
INCHANGE |
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2SC2482 | 0.1A, 300V, NPN EPITAXIAL PLANAR TRANSISTOR |
Unisonic Technologies |
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2SC2489 | Silicon NPN Power Transistor |
INCHANGE |
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2SC2489 | SI NPN EPITAXIAL MESA |
Panasonic Semiconductor |
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2SC2484 | SILICON EPITAXAL BASE VLESA TRANSISTOR |
Panasonic Semiconductor |
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2SC2480 | Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing) |
Panasonic Semiconductor |
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2SC2485 | SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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