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Datasheet 2SC2510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC2510 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510
2SC2510
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
l Specified 28V, 28MHz Characteristics
l Output Power
: Po = 150WPEP (Min.)
l Power Gain
: Gp = 12.2dB (Min.)
l Collector Efficiency
: ηC = 35% (Min |
 Toshiba Semiconductor |
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| 2 | 2SC2510 | Silicon NPN POWER TRANSISTOR HG Semiconductors
2SC2510HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 28V, 28MHz Characteristics
Output Power
: Po = 150W PEP (Min.)
Power Gain
: Gp = 12.2dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMU |
 HGSemi |
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| 1 | 2SC2510A | SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12 |
Toshiba Semiconductor |
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