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2SC2650 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC2650 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2650
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Switching regula | INCHANGE |
Numéro de référence | fiche technique | Fabricant | |
2SC2655 | Silicon NPN Epitaxial Type TRANSISTOR |
Toshiba Semiconductor |
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2SC2655 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS |
Unisonic Technologies |
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2SC2655 | NPN Plastic Encapsulated Transistor |
SeCoS |
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2SC2655 | NPN General Purpose Transistors |
Weitron |
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2SC2653 | NPN Transistor |
Panasonic |
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2SC2656 | TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
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2SC2650 | Silicon NPN Power Transistor |
INCHANGE |
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2SC2654 | SILICON POWER TRANSISTOR |
SavantIC |
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2SC2653H | NPN Transistor |
Panasonic |
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2SC2653H | Silicon NPN Power Transistor |
Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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