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2SC2715 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
8 | 2SC2715 | Silicon NPN Epitaxial Planar Type Transistor 2SC2715
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage.
Maxim | Toshiba Semiconductor |
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7 | 2SC2715 | NPN Plastic-Encapsulate Transistor 2SC2715
Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
3 3
High Power Gain Recommended for FM IF,OSC Stage and AM CONV. | SeCoS |
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6 | 2SC2715 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC2715
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). Recommended for FM IF, OSC stage and AM CONV. IF stage.
+0.1 1.3-0.1
1
+0.1 | Kexin |
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5 | 2SC2715 | TRANSISTOR 2SC2715
TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE
z z
High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter | Jin Yu Semiconductor |
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4 | 2SC2715 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.
Production specification
2SC2715
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. 2SC | Galaxy Semi-Conductor |
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3 | 2SC2715M | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C WBFBP-03B
(1.2×1.2×0.5) unit: mm
2SC2715M TRANSISTOR
DESCRIPTION NPN Epitaxial planar Silicon Transistor
TOP
B
1. BASE
E C
FEATURES High power gain | Jiangsu Changjiang |
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2 | 2SC2715 | Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor
FEATURES
z High power gain z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type N | Galaxy Microelectronics |
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1 | 2SC2715 | Silicon NPN transistor 2SC2715
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
功率增益高,用于调频中频,振荡级和调幅转换中频级 | BLUE ROCKET ELECTRONICS |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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