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Datasheet 2SC2717 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SC2717 | NPN Transistor 1. BASE 2. EMITTER 3. COLLECTOR
2SC2717(NPN)
TO-92 Bipolar Transistors
TO-92
Features
High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30 V
VCEO
Collector-Emitter V |
 LGE |
 |
| 4 | 2SC2717 | Silicon NPN transistor 2SC2717
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.
特征 / Features 增益高,hFE 线性好。 High gain, good linearity of hFE.
用途 / Applications 用于电视末级图象放大。 TV fina |
 BLUE ROCKET ELECTRONICS |
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| 3 | 2SC2717 | Silicon NPN Epitaxial Planar Type Transistor 2SC2216,2SC2717
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2216,2SC2717
TV Final Picture IF Amplifier Applications
Unit: mm
· High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE.
Maximum Ratings (Ta = 25°C)
Characteristics
2SC2216 Collector-base voltage
2SC2717
C |
 Toshiba Semiconductor |
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| 2 | 2SC2717 | NPN Plastic-Encapsulated Transistor 2SC2717
Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
High Gain：Gpe=33 dB(Typ.)(f =45MHz) Good Linearity of hFE
J A B K D
Base Emitter Collector
REF. A B |
 SeCoS |
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