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2SC2859 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2SC2859 | TRANSISTOR (AUDIO FREQUENCY LOW POWER/ DRIVER STAGE AMPLIFIER/ SWITCHING APPLICATIONS) | Toshiba Semiconductor |
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3 | 2SC2859 | NPN Plastic-Encapsulate Transistor 2SC2859
Elektronische Bauelemente 0.5A , 35V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
3 3
Excellent hFE Linearity Switching Applications
L
Top View
C | SeCoS |
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2 | 2SC2859 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC2859
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA).
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Features
2
0.55
0.4 | Kexin |
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1 | 2SC2859 | TRANSISTOR 2 SC2859 TRANSISTOR (NPN)
SOT–23
FEATURES Excellent hFE Linearity Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage | Jin Yu Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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