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Datasheet 2SC2881 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SC2881 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications Power Amplifier Applications
2SC2881
Unit: mm
• High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package
• PC = 1.0 to 2.0 W (mounted on ceramic substr |
 Toshiba Semiconductor |
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| 6 | 2SC2881 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC2881
NPN SILICON TRANSISTOR
VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
FEATURES
* High voltage: VCEO=120V * High transition frequency: fT=120MHz(typ.) * Complementary to 2SA1201
1 SOT-89
ORDERING INFORMATION
Ordering Number 2SC2881G-x- |
 Unisonic Technologies |
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| 5 | 2SC2881 | Voltage Amplifier Applications SMD Type
Voltage Amplifier Applications 2SC2881
Transistors
Features
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201
Absolute Maximum Ratings Ta = 25
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltag |
 Kexin |
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| 4 | 2SC2881 | TRANSISTOR 2SC2881
TRANSISTOR (NPN)
FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Volt |
 Jin Yu Semiconductor |
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