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2SC3011 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC3011 | Silicon NPN epitaxial planer Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3011
2SC3011
UHF~C Band Low Noise Amplifier Applications
Unit: mm
· High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz
Maximum Rati | Toshiba Semiconductor |
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1 | 2SC3011 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3011
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
High fT : fT=6.5GHz
0.55
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
+0.1 1.3-0.1
High Gain :|S | Kexin |
Numéro de référence | Description détaillée | Fabricant | |
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Micross |
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