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Datasheet 2SC3122 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3122 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
2SC3122
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Colle |
 Toshiba Semiconductor |
 |
| 2 | 2SC3122 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3122
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics
0.55
High Gain: Gpe=24dB(Typ.)(f=200MHz)
+0.1 1.3-0.1
Features
0.4
3
+0.0 |
 Kexin |
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| 1 | 2SC3122 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3122
DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz
APPLICATIONS ·Designed for TV VHF RF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETE |
 Inchange Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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