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Datasheet 2SC3123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3123 | NPN EPITAXIAL PLANAR TYPE(TV VHF MIXER APPLICATIONS) 2SC3123
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3123
TV VHF Mixer Applications
• • High conversion gain: Gce = 23dB (typ.) Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Collector-base voltage Collector-emi |
 Toshiba Semiconductor |
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| 2 | 2SC3123 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC3123
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)
0.55
High Conversion Gain :Gce=23dB(TYP.)
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0 |
 Kexin |
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| 1 | 2SC3123 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3123
DESCRIPTION ·High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP.
APPLICATIONS ·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARA |
 Inchange Semiconductor |
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