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2SC3303 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC3303 | SILICON NPN EPITAXIAL TYPE TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
2SC3303
High Current Switching Applications DC-DC Converter Applications
Industrial Applications Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) | Toshiba Semiconductor |
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1 | 2SC3303 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3303
DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
p | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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