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2SC3356 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
13 2SC3356   High-Frequency Amplifier Transistor NPN Silicon

2SC3356 High-Frequency Amplifier Transistor NPN Silicon P b Lead(Pb)-Free FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain 1 2 3 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 MAXIMUM RATINGS (TA=25℃
Weitron
Weitron
PDF
12 2SC3356   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peri
Unisonic Technologies
Unisonic Technologies
PDF
11 2SC3356   NPN Silicon Plastic-Encapsulate Transistor

2SC3356 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.10
SeCoS
SeCoS
PDF
10 2SC3356   MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynam
NEC
NEC
PDF
9 2SC3356   NPN Silicon Epitaxial Transistor

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC
Kexin
Kexin
PDF
8 2SC3356   TRANSISTOR

2SC3356 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 0. 025 0. 95¡ À TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown vol
Jin Yu Semiconductor
Jin Yu Semiconductor
PDF
7 2SC3356   Silicon NPN RF Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V,
Inchange Semiconductor
Inchange Semiconductor
PDF
6 2SC3356W   Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP.
Galaxy Semi-Conductor Holdings Limited
Galaxy Semi-Conductor Holdings Limited
PDF


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Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

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Micross
Micross
PDF
B8524

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TDK
TDK
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BA6343

Stepping motor driver

ROHM
ROHM
PDF

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