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2SC3356 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
13 | 2SC3356 | High-Frequency Amplifier Transistor NPN Silicon 2SC3356
High-Frequency Amplifier Transistor NPN Silicon
P b Lead(Pb)-Free
FEATURES
* Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain
1 2 3
1. BASE 2. EMITTER 3. COLLECTOR
SOT-23
MAXIMUM RATINGS (TA=25℃ | Weitron |
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12 | 2SC3356 | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peri | Unisonic Technologies |
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11 | 2SC3356 | NPN Silicon Plastic-Encapsulate Transistor 2SC3356
Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23 Dim
A
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.10 | SeCoS |
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10 | 2SC3356 | MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynam | NEC |
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9 | 2SC3356 | NPN Silicon Epitaxial Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC3356
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC | Kexin |
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8 | 2SC3356 | TRANSISTOR 2SC3356
TRANSISTOR (NPN)
FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02 0. 025 0. 95¡ À
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown vol | Jin Yu Semiconductor |
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7 | 2SC3356 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3356
DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, | Inchange Semiconductor |
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6 | 2SC3356W | Silicon Epitaxial Planar Transistor
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz
Production specification
2SC3356W
Pb
Lead-free
z
High power gain:MAG=13dB TYP. | Galaxy Semi-Conductor Holdings Limited |
Numéro de référence | Description détaillée | Fabricant | |
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