Datasheet 2SC3359S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SC3359S	Power Transistor 2SC3359S Transistors Power Transistor (80V, 0.3A) 2SC3359S zFeatures 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage C	ROHM Semiconductor

2SC33 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SC3358	NPN Silicon Epitaxial Transistor UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR 3 HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES Low Noise and High Gain High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-base v	Unisonic Technologies
2SC3378	Transistoe	Toshiba
2SC3311A	Silicon NPN epitaxial planer type(For low-frequency amplification) Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak co	Panasonic Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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