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Datasheet 2SC3512 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3512 | Silicon NPN Epitaxial 2SC3512
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
TO-92 (2)
1. Base 2. Emitter 3. Collector 3 2 1
2SC3512
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power diss |
 Hitachi Semiconductor |
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| 2 | 2SC3512 | Silicon NPN Epitaxial 2SC3512
Silicon NPN Epitaxial
REJ03G0714-0300 Rev.3.00 Apr 20, 2006
Application
UHF / VHF wide band amplifier
Outline
RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2))
1. Base 2. Emitter 3. Collector
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector |
 Renesas |
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| 1 | 2SC3512 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3512
DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz
APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
ABSOLUTE MA |
 Inchange Semiconductor |
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