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Datasheet 2SC3583 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SC3583 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3583
DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability
Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain
NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1 |
Inchange Semiconductor |
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2 | 2SC3583 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high |
NEC |
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1 | 2SC3583 | NPN Silicon Epitaxial Transistor SMD Type
NPN Silicon Epitaxial Transistor 2SC3583
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3. |
Kexin |
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Número de pieza | Descripción | Fabricantes | |
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