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Datasheet 2SC3647 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC3647 | PNP / NPN Epitaxial Planar Silicon Transistor Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching spee |
 Sanyo Semicon Device |
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| 3 | 2SC3647 | HIGH-VOLTAGE SWITCHING APPLICATIONS UNISONIC TECHNOLOGIES CO.,
2SC3647
HIGH-VOLTAGE SWITCHING APPLICATIONS
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hy |
 Unisonic Technologies |
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| 2 | 2SC3647 | Transistor SMD Type
High-Voltage Switching Applications 2SC3647
Transistors
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector |
 Kexin |
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| 1 | 2SC3647 | Bipolar Transistor Ordering number : EN2006D
2SA1417/2SC3647
Bipolar Transistor
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provi |
 ON Semiconductor |
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