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Datasheet 2SC3651 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC3651 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low |
 Sanyo Semicon Device |
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| 1 | 2SC3651 | Transistor SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC3651
Features
High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V)
Very small size making it easy to provide high-density small-sized hybrid IC's.
Absolute Maximum Ratings Ta |
 Kexin |
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