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2SC3673 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC3673 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3673
Switching Applications Solenoid Drive Applications
2SC3673
Unit: mm
• High DC current gain : hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage
: VCE (sat) = 0.5 V (max | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC3679 | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
Sanken electric |
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2SC3675 | High-Voltage Amp/ High-Voltage Switching Applications |
Sanyo Semicon Device |
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2SC3679 | Silicon NPN Power Transistors |
Inchange Semiconductor |
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2SC3673 | Silicon NPN Epitaxial Type TRANSISTOR |
Toshiba Semiconductor |
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2SC3672 | Silicon NPN Triple Diffused Type TRANSISTOR |
Toshiba Semiconductor |
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2SC3671 | Silicon NPN Epitaxial Type TRANSISTOR |
Toshiba Semiconductor |
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2SC3678 | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
Sanken electric |
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2SC3675 | 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications |
Sanyo Semicon Device |
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2SC3678 | SILICON POWER TRANSISTOR |
SavantIC |
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2SC3679 | SILICON POWER TRANSISTOR |
SavantIC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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