DataSheetWiki.com 2SC3709 دیتاشیت

Datasheet 2SC3709 PDF ( Fiche technique )



2SC3709 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
3 2SC3709   NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complemen
Toshiba Semiconductor
Toshiba Semiconductor
PDF
2 2SC3709   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPL
Inchange Semiconductor
Inchange Semiconductor
PDF
1 2SC3709A   High-Current Switching Applications

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementar
Toshiba
Toshiba
PDF


[1] 


Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

Normally-ON Trench Silicon Carbide Power JFET

Micross
Micross
PDF
B8524

SAW Components

TDK
TDK
PDF
BA6343

Stepping motor driver

ROHM
ROHM
PDF

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


   www.DataSheetWiki.com |    2020    |  Contactez-nous   |    Link    |   English