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2SC3709 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SC3709 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
2SC3709A
High-Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complemen | Toshiba Semiconductor |
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2 | 2SC3709 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3709
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451
APPL | Inchange Semiconductor |
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1 | 2SC3709A | High-Current Switching Applications 2SC3709A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
High-Current Switching Applications
Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementar | Toshiba |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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