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2SC3998 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC3998 | Very High-Definition Color Display Horizontal Deflection Output Applications Ordering number:ENN2732
NPN Triple Diffused Planar Silicon Transistor
2SC3998
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliabil | Sanyo Semicon Device |
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1 | 2SC3998 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
isc Product Specification
2SC3998
DESCRIPTION ·High Switching Speed ·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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TDK |
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ROHM |
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