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2SC400 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
20 | 2SC400 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
| Micro Electronics |
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19 | 2SC4008 | Power Transistor | ROHM Semiconductor |
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18 | 2SC4007 | Silicon NPN Power Transistor www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4007
DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) | Inchange Semiconductor |
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17 | 2SC4006 | NPN Planar Type Silicon Darlington Transistor Ordering number:EN2272A
NPN Planar Type Silicon Darlington Transistor
2SC4006
Driver Applications
Applications
· Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm 2041A
Fea | Sanyo Semicon Device |
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16 | 2SC4005 | NPN Planar Type Silicon Darlington Transistor Ordering number:EN2271A
NPN Planar Type Silicon Darlington Transistor
2SC4005
Driver Applications
Applications
· Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm 2041A
Fea | Sanyo Semicon Device |
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15 | 2SC4005 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4005
DESCRIPTION ·High DC current gain. ·Large current capacity and wide ASO. ·On-chip Zener diode of 50±8V between collector and
base. ·Large inductive load | Inchange Semiconductor |
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14 | 2SC4004 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For | SavantIC |
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13 | 2SC4004 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.2 5.5±0.2
Unit: mm
0.7±0.1
s Features
q q q q q
4.2±0.2
4.2±0.2 2.7±0.2
High-speed switching High collector to base | Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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