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2SC4604 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC4604 | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SC4604
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application. Power Switching Applications.
Unit: mm
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Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed s | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC460 | Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
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2SC460 | (2SC460 / 2SC461) Silicon NPN Epitaxial Planar |
Renesas |
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2SC4603 | Ratigns and Caracteristics of Fuji Power Transistor |
Fuji Electric |
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2SC4604 | NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
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2SC4606 | Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic Semiconductor |
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2SC4600 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC4603 | TRIPLE DIFFUSED PLANER TYPE |
New Jersey Semi-Conductor |
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2SC4602 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC4601 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC4606 | Silicon PNP Epitaxial Transistor |
Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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