|
|
2SC4666 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC4666 | Silicon NPN Epitaxial Type TRANSISTOR 2SC4666
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666
Audio Frequency Amplifier Applications Switching Applications
• High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Sm | Toshiba Semiconductor |
|
1 | 2SC4666 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SC4666
Transistors IC
Features
High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Coll | Kexin |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |