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2SC4953 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC4953 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High-speed switching High collector to base voltage VCBO Wide ar | Panasonic Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC495 | (2SC495 / 2SC496) Silicon NPN Epitaxial Transistors |
Toshiba |
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2SC4953 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic Semiconductor |
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2SC4954 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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2SC4957 | NPN EPITAXIAL SILICON RF TRANSISTOR |
Renesas |
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2SC4955 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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2SC4959 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
NEC |
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2SC4958 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
NEC |
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2SC4957 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
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2SC4956-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
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2SC4956 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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