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2SC5015 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | 2SC5015 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage | NEC |
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3 | 2SC5015-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage | NEC |
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2 | 2SC5015-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage | NEC |
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1 | 2SC5015 | NPN EPITAXIAL SILICON RF TRANSISTOR DATA SHEET
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
NE68518 / 2SC5015
NPN SILICON RF TRANSISTOR
FEATURES
• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low vol | CEL |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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