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Datasheet 2SC505 PDF ( Fiche technique )



2SC505 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
9 2SC5057   Silicon NPN Triple Diffused Planar

2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item C
Hitachi Semiconductor
Hitachi Semiconductor
PDF
8 2SC5053   Medium Power Transistor (-50V/ -1A)

Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described he
ROHM Semiconductor
ROHM Semiconductor
PDF
7 2SC5053   Medium Power Transistor

SMD Type Medium Power Transistor 2SC5053 Transistors Features Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage C
Kexin
Kexin
PDF
6 2SC5052   NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
PDF
5 2SC5051   Silicon NPN Epitaxial

2SC5051 Silicon NPN Epitaxial REJ03G0741-0300 (Previous ADE-208-1131A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.
Renesas
Renesas
PDF
4 2SC5051   Silicon NPN Epitaxial

2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2.
Hitachi Semiconductor
Hitachi Semiconductor
PDF
3 2SC5050   Silicon NPN Epitaxial

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology
Renesas
Renesas
PDF
2 2SC5050   Silicon NPN Epitaxial

2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Ba
Hitachi Semiconductor
Hitachi Semiconductor
PDF


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Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

Normally-ON Trench Silicon Carbide Power JFET

Micross
Micross
PDF
B8524

SAW Components

TDK
TDK
PDF
BA6343

Stepping motor driver

ROHM
ROHM
PDF

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