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2SC505 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
9 | 2SC5057 | Silicon NPN Triple Diffused Planar 2SC5057
Silicon NPN Triple Diffused Planar
Application
HDTV horizontal deflection output
Features
• High breakdown voltage VCBO = 1700 V
Outline
TO-3PL
1 2 3
1. Base 2. Collector 3. Emitter
2SC5057
Absolute Maximum Ratings (Ta = 25°C)
Item C | Hitachi Semiconductor |
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8 | 2SC5053 | Medium Power Transistor (-50V/ -1A) Transistors
2SA1900 2SC5053
(96-115-B352)
(96-196-D352)
297
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described he | ROHM Semiconductor |
|
7 | 2SC5053 | Medium Power Transistor SMD Type
Medium Power Transistor 2SC5053
Transistors
Features
Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage C | Kexin |
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6 | 2SC5052 | NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
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5 | 2SC5051 | Silicon NPN Epitaxial 2SC5051
Silicon NPN Epitaxial
REJ03G0741-0300 (Previous ADE-208-1131A) Rev.3.00 Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1. | Renesas |
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4 | 2SC5051 | Silicon NPN Epitaxial 2SC5051
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK
3
1 2
1. Emitter 2. | Hitachi Semiconductor |
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3 | 2SC5050 | Silicon NPN Epitaxial To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology | Renesas |
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2 | 2SC5050 | Silicon NPN Epitaxial 2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Ba | Hitachi Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
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