DataSheetWiki.com 2SC506 دیتاشیت

Datasheet 2SC506 PDF ( Fiche technique )



2SC506 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
14 2SC5069   NPN Epitaxial Planar Silicon Transistor

Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter
Sanyo Semicon Device
Sanyo Semicon Device
PDF
13 2SC5069   NPN Epitaxial Planar Silicon Transistor

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter
Kexin
Kexin
PDF
12 2SC5068A   Silicon NPN Triple Diffused Planar

2SC5068A Silicon NPN Triple Diffused Planar July 1993 Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V, IC = 12 A • High speed switching tf = 0.2 µsec
Hitachi
Hitachi
PDF
11 2SC5066   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics C
Toshiba Semiconductor
Toshiba Semiconductor
PDF
10 2SC5066FT   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Cha
Toshiba Semiconductor
Toshiba Semiconductor
PDF
9 2SC5065   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Ch
Toshiba Semiconductor
Toshiba Semiconductor
PDF
8 2SC5064   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Charact
Toshiba Semiconductor
Toshiba Semiconductor
PDF
7 2SC5064   Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5064 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amp
Inchange Semiconductor
Inchange Semiconductor
PDF


[1] [2] 


Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

Normally-ON Trench Silicon Carbide Power JFET

Micross
Micross
PDF
B8524

SAW Components

TDK
TDK
PDF
BA6343

Stepping motor driver

ROHM
ROHM
PDF

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


   www.DataSheetWiki.com |    2020    |  Contactez-nous   |    Link    |   English