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2SC506 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
14 | 2SC5069 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN4509
NPN Epitaxial Planar Silicon Transistor
2SC5069
Low-Frequency General-Purpose Amplifier, Driver Applications
Features
· High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter | Sanyo Semicon Device |
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13 | 2SC5069 | NPN Epitaxial Planar Silicon Transistor SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC5069
Features
High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter | Kexin |
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12 | 2SC5068A | Silicon NPN Triple Diffused Planar
2SC5068A
Silicon NPN Triple Diffused Planar
July 1993 Preliminary
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V, IC = 12 A
• High speed switching tf = 0.2 µsec | Hitachi |
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11 | 2SC5066 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066
2SC5066
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
C | Toshiba Semiconductor |
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10 | 2SC5066FT | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066FT
2SC5066FT
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Cha | Toshiba Semiconductor |
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9 | 2SC5065 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
2SC5065
VHF to UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Ch | Toshiba Semiconductor |
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8 | 2SC5064 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064
2SC5064
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Charact | Toshiba Semiconductor |
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7 | 2SC5064 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5064
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amp | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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