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Datasheet 2SC508 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | 2SC508 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC508
DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output applications.
PINNING(see Fig.2) PIN 1 2 3 Ba |
 SavantIC |
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| 12 | 2SC5080 | Silicon NPN Epitaxial 2SC5080
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3 1 4
1. Collector 2. Emitter 3. Base 4. Emitter
2SC5080
Absolute |
 Hitachi Semiconductor |
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| 11 | 2SC5081 | Silicon NPN Epitaxial 2SC5081
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter
2SC5081
Absolute |
Hitachi Semiconductor |
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| 10 | 2SC5084 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5084
DESCRIPTION ·High Gain Bandwidth Product
fT = 7 GHz TYP. ·High Gain, Low Noise Figure
︱S21e︱2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier appli |
 Inchange Semiconductor |
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