Datasheet 2SC5198B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SC5198B	Silicon NPN triple diffusion planar transistor SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the	NELL SEMICONDUCTOR

2SC51 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SC517	NPN Transistor	ETC
2SC5198	NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage	Toshiba Semiconductor
2SC5171	NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collec	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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