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Datasheet 2SC5218 PDF ( Fiche technique )



2SC5218 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
3 2SC5218   Silicon NPN Epitaxial

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology
Renesas
Renesas
PDF
2 2SC5218   Silicon NPN Epitaxial

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK
Hitachi Semiconductor
Hitachi Semiconductor
PDF
1 2SC5218   Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5218 DESCRIPTION ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS ·Desig
Inchange Semiconductor
Inchange Semiconductor
PDF


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Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

Normally-ON Trench Silicon Carbide Power JFET

Micross
Micross
PDF
B8524

SAW Components

TDK
TDK
PDF
BA6343

Stepping motor driver

ROHM
ROHM
PDF

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