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Datasheet 2SC5354 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5354 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
2SC5354
Unit: mm
• Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A)
• High breakdow |
 Toshiba Semiconductor |
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| 2 | 2SC5354 | NPN Plastic-Encapsulate Transistor 2SC5354
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES
* Excellent hFE Linearity * Low Noise
1. BASE 2. EMITTER 3. COLLECTOR 3 1 2
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emit |
 Weitron |
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| 1 | 2SC5354 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5354
DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed
APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·H |
 Inchange Semiconductor |
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