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2SC5369 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC5369 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5369
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
FEATURES
• High f T 14 GHz TYP. • High gain | S 21 e | 2 = 14 dB TYP. • NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA • 6-pin sm | NEC |
Numéro de référence | fiche technique | Fabricant | |
2SC536 | TRANSISTOR (NPN) |
WEJ |
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2SC536 | TO-92 Plastic Encapsulate Transistors |
Jiangsu Changjiang Electronics Technology |
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2SC536 | Silicon NPN transistor |
BLUE ROCKET ELECTRONICS |
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2SC536N | Low-Frequency General-Purpose Amplifier Applications |
Sanyo Semicon Device |
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2SC536 | (2SCxxx) Low Level and General Purpose Amplifiers |
Micro Electronics |
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2SC536 | NPN Silicon Epitaxial Planar Transistor |
Bluecolour |
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2SC536N | Bipolar Transistor |
ON Semiconductor |
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2SC536 | NPN Silicon Epitaxial Planar Transistor |
SEMTECH |
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2SC5361 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER APPLICATIONS) |
Toshiba Semiconductor |
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2SC536K | Silicon NPN transistor |
BLUE ROCKET ELECTRONICS |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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