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2SC5376 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC5376 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
2SC5376
Unit: mm
• Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC537 | (2SCxxx) Low Level and General Purpose Amplifiers |
Micro Electronics |
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2SC5374 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC5375 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC5374A | RF Transistor |
ON Semiconductor |
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2SC5370 | Silicon NPN Epitaxial Planar Transistor(Emergency Lighting Inverter and General Purpose) |
Sanken electric |
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2SC5379 | Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) |
Panasonic Semiconductor |
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2SC5378 | Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) |
Panasonic Semiconductor |
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2SC5376 | Silicon NPN Epitaxial Type TRANSISTOR |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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