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2SC5408 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC5408 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 | NEC |
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1 | 2SC5408-T1 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 | NEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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