Datasheet 2SC5408-T1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SC5408-T1	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain \|S21e\|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold	NEC

2SC5408 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SC5408	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain \|S21e\|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6	NEC
2SC5408-T1	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain \|S21e\|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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