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2SC5435 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC5435 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5435
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5010 | NEC |
Numéro de référence | fiche technique | Fabricant | |
2SC5435 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5431 | NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX |
NEC |
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2SC5434 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5436 | NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5432 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5433 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5437 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
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2SC5439 | SILICON POWER TRANSISTOR |
SavantIC |
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2SC5439 | Silicon NPN Triple Diffused Type TRANSISTOR |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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