|
|
Datasheet 2SC5463 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5463 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5463
DESCRIPTION ·Low Noise Figure
NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain
︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz
APPLICATIONS ·Designed for use in VHF~ UHF band low noi |
 Inchange Semiconductor |
 |
| 2 | 2SC5463 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5463
2SC5463
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage |
 Toshiba Semiconductor |
|
| 1 | 2SC5463 | Trans GP BJT NPN 12V 0.06A 3-Pin USM |
 New Jersey Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SC5463. Si pulsa el resultado de búsqueda de 2SC5463 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |