|
|
2SC563 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
9 | 2SC563A | Si NPN Epitaxial Planar | ETC |
|
8 | 2SC563 | Si NPN Epitaxial Planar | ETC |
|
7 | 2SC5639 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:ENN6467
NPN Triple Diffused Planar Silicon Transistor
2SC5639
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliabil | Sanyo Semicon Device |
|
6 | 2SC5637 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:ENN6465
NPN Triple Diffused Planar Silicon Transistor
2SC5637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliabil | Sanyo Semicon Device |
|
5 | 2SC5636 | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE :mm
1.6 0.4 0.8 0.4
1
2
3
1 2 3
JEITA:SC-90
VCBO VCEO VEBO IC PC Tj Tstg
15 6 1.5 50 100 +125 -55~+125
V V V mA mW
I I
CBO EBO
VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=10mA VCE =5V, I E =10mA VCB =5V, I E =0mA | Isahaya Electronics |
|
4 | 2SC5635 | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE :mm
2.1 0.425 1.25 0.425
1
2
3
1 2 3
JEITA:SC-70
VCBO VCEO VEBO IC PC Tj Tstg
15 6 1.5 50 125 +125 -55~+125
V V V mA mW
I I
CBO EBO
VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=10mA VCE =5V, I E =10mA VCB =5V, I E | Isahaya Electronics |
|
3 | 2SC5634 | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE :mm
2.5 0.5 1.5 0.5
1
2
3
1 2 3
JEITA:SC-59
VCBO VCEO VEBO IC PC Tj Tstg
15 6 1.5 50 150 +125 -55~+125
V V V mA mW
I I
CBO EBO
VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=10mA VCE =5V, I E =10mA VCB =5V, I E =0mA | Isahaya Electronics |
|
2 | 2SC5632 | Silicon NPN epitaxial planar type Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
(0.425) 0.3+0.1 –0.0
Unit: mm
0.15+0.10 –0.05
■ Features
• High transition frequency fT • S-Mini type package, allowing downsizing of th | Panasonic Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |