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2SC5703 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC5703 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltag | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC5707 | High Current Switching Applications |
Sanyo Semicon Device |
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2SC5706 | Bipolar Transistor |
ON Semiconductor |
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2SC5706 | POWER TRANSISTOR(5A/50V/15W) |
Mospec Semiconductor |
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2SC5706 | High Current Switching Applications |
Sanyo Semicon Device |
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2SC5706 | NPN EPITAXIAL PLANAR TRANSISTOR |
Weitron Technology |
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2SC5706D | NPN Silicon General Purpose Transistor |
SeCoS |
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2SC5706 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2SC5703 | TOSHIBA Transistor Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC5702 | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator |
Hitachi |
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2SC5707 | Silicon NPN Power Transistor |
Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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