|
|
2SC5755 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC5755 | High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5755
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
· · · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC5753 | NPN SILICON RF TRANSISTOR |
CEL |
|
2SC5752 | NPN SILICON RF TRANSISTOR |
NEC |
|
2SC5751 | NPN SILICON RF TRANSISTOR |
Renesas |
|
2SC5754 | NPN SILICON RF TRANSISTOR |
NEC |
|
2SC5750 | NPN SILICON RF TRANSISTOR |
Renesas |
|
2SC5753 | NPN SILICON RF TRANSISTOR |
Renesas |
|
2SC5757 | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Hitachi Semiconductor |
|
2SC5759 | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Hitachi Semiconductor |
|
2SC5758 | Silicon NPN Epitaxial VHF/UHF wide band amplifier |
Hitachi Semiconductor |
|
2SC5755 | High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |