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2SC5765 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | 2SC5765 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER STROBO FLASH
DESCRIPTION
medium power amplifier applications strobo flash applications
FEATURES
* Low Saturation Voltage: VCE(sat) = 0.27 V (max. | Unisonic Technologies |
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1 | 2SC5765 | MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 2SC5765
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
Unit: mm
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Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25° | Toshiba Semiconductor |
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