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Datasheet 2SC5890 PDF ( Fiche technique )



2SC5890 Fiches techniques

Numéro de référence Description détaillée Fabricant PDF
3 2SC5890   Trans GP BJT NPN 12V 0.075A 3-Pin MPAK

New Jersey Semiconductor
New Jersey Semiconductor
PDF
2 2SC5890   Silicon NPN Epitaxial UHF / VHF wide band amplifier

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred
Renesas Technology
Renesas Technology
PDF
1 2SC5890   Silicon NPN RF Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICAT
Inchange Semiconductor
Inchange Semiconductor
PDF


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Fiche de données de référence

Numéro de référence Description détaillée Fabricant PDF
ASJD1200R085

Normally-ON Trench Silicon Carbide Power JFET

Micross
Micross
PDF
B8524

SAW Components

TDK
TDK
PDF
BA6343

Stepping motor driver

ROHM
ROHM
PDF

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