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2SC5890 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | 2SC5890 | Trans GP BJT NPN 12V 0.075A 3-Pin MPAK | New Jersey Semiconductor |
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2 | 2SC5890 | Silicon NPN Epitaxial UHF / VHF wide band amplifier
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred | Renesas Technology |
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1 | 2SC5890 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP. ·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
APPLICAT | Inchange Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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