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Datasheet 2SC6026 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC6026 | Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications 2SC6026
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
• • • • •
Unit: mm
0.15±0.05
High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) |
 Toshiba Semiconductor |
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| 2 | 2SC6026CT | General Purpose Amplifier Applications 2SC6026CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC6026CT
General Purpose Amplifier Applications
• • • • High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Co |
 Toshiba |
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| 1 | 2SC6026MFV | Transistor Silicon NPN Epitaxial Type 2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• • • • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
0.8 ± 0.05 1.2 ± 0.05 0 |
Toshiba Semiconductor |
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