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Datasheet 2SC6026CT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SC6026CT | General Purpose Amplifier Applications 2SC6026CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC6026CT
General Purpose Amplifier Applications
• • • • High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Co |
Toshiba |
2SC602 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SC6026 | Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
Toshiba Semiconductor |
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2SC6025 | NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
Sanyo Semicon Device |
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2SC6026MFV | Transistor Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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