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2SC6061 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC6061 | Silicon NPN Epitaxial Type 2SC6061
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
High-Speed Switching Applications DC-DC Converter Applications
・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)
0.95 0.95 2.9±0.2 1.9±0.2
Unit: mm
+0.2 2.8-0.3 +0.2 1.6-0.1
・L | Toshiba |
Numéro de référence | fiche technique | Fabricant | |
2SC6067 | Silicon NPN Epitaxial Planar Type Transistor |
Toshiba |
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2SC6061 | Silicon NPN Epitaxial Type |
Toshiba |
|
2SC606 | (2SC605 / 2SC606) NPN SILICON TRANSISTOR |
ETC |
|
2SC6060 | Transistor Silicon NPN Epitaxial Type |
Toshiba |
|
2SC6064 | NPN Epitaxial Planar Silicon Transistors |
Sanyo Semicon Device |
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2SC6065 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
|
2SC606 | (2SC960 / 2SC959 / 2SC606 / 2SC607) PNP/NPN SILICON EPITAXIAL TRANSISTOR |
ETC |
Numéro de référence | Description détaillée | Fabricant | |
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Micross |
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