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2SC6077 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | 2SC6077 | Silicon NPN Epitaxial Type 2SC6077
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6077
○ Power Amplifier Applications ○ Power Switching Applications
• • Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
2SC6072 | Multi-chip Device Silicon NPN Epitaxial Transistor |
Toshiba |
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2SC6075 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC607 | (2SC960 / 2SC959 / 2SC606 / 2SC607) PNP/NPN SILICON EPITAXIAL TRANSISTOR |
ETC |
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2SC6071 | NPN Epitaxial Planar Silicon Transistor |
Sanyo Semicon Device |
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2SC6077 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC6078 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC6076 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
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2SC6079 | Silicon NPN Epitaxial Type |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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